Irvine, Calif.—Microsemi Corp. recently developed a high speed IGBT transistor line for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

(Nanowerk News) Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department ...

Researchers have built working transistors from graphene nanoribbons less than a nanometer wide, achieving room-temperature ...

Japan Small Signal Transistor Market is expected to experience steady growth over the next decade, reflecting broader trends in electronics that drive continued demand for precision, efficiency, and ...