Abstract: Electrode materials can significantly impact the chemical and physical properties and polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 (HZO) films deposited through atomic layer ...
Abstract: In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top ...
Mat-Su College invites prospective students, families, and community members to attend its 2026 Spring Open House on Wednesday, April 22, from 2:00 p.m. to 7:00 p.m. The event will take ...
Morning Overview on MSN
Monash researchers capture atomic motion that writes data in next-gen memory
A team at Monash University has recorded, for the first time, the atom-by-atom rearrangements that occur when data is written ...
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 (HZO) and La0.67Sr0.33MnO3 (LSMO) ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
• Ferroelectric–Nonferroelectric Transition: When the capacitor size is reduced to 3.85 μm, ferroelectricity vanishes and an ultrahigh dielectric permittivity of 1466 emerges, without requiring ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Scientists in South Korea and Japan created a man-made crystal (SrFe0.5Co0.5O2.5) that absorbs and releases oxygen repeatedly at moderate temperatures without breaking down. The discovery could ...
Scientists develop of a special type of crystal with oxygen breathing abilities, which could be used in clean energy technologies and next-generation electronics. A team of scientists from Korea and ...
CEA-Leti research engineers demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into back-end-of-line (BEOL) at 22nm FD-SoI technology node.
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